Infineon OptiMOS-T Type N-Channel MOSFET, 17 A, 250 V Enhancement, 3-Pin TO-263 IPB17N25S3100ATMA1
- RS Stock No.:
- 826-9002
- Mfr. Part No.:
- IPB17N25S3100ATMA1
- Manufacturer:
- Infineon
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PHP2,594.20
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PHP2,905.60
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Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 20 | PHP129.71 | PHP2,594.20 |
| 40 - 80 | PHP120.74 | PHP2,414.80 |
| 100 - 180 | PHP120.172 | PHP2,403.44 |
| 200 - 380 | PHP118.987 | PHP2,379.74 |
| 400 + | PHP112.079 | PHP2,241.58 |
*price indicative
- RS Stock No.:
- 826-9002
- Mfr. Part No.:
- IPB17N25S3100ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-263 | |
| Series | OptiMOS-T | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 107W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10mm | |
| Height | 4.4mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-263 | ||
Series OptiMOS-T | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 107W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10mm | ||
Height 4.4mm | ||
Automotive Standard AEC-Q101 | ||
RoHS Status: Not Applicable
Infineon OptiMOS-T Series MOSFET, 250V Maximum Drain Source Voltage, 17A Maximum Continuous Drain Current - IPB17N25S3100ATMA1
This MOSFET is a surface‑mount N‑channel enhancement device designed for high‑voltage switching in automotive and industrial power systems. It operates across a wide temperature range and is intended for applications requiring robust thermal endurance and controlled switching performance without detailing its mechanical package or pin count.
Features and Benefits:
• 250V drain rating enabling high‑voltage switching capability
• 17A continuous drain current supporting substantial load currents
• 100 mΩ maximum RDS(on) reducing conduction losses in power stages
• 14 nC typical gate charge for efficient switching control
• 0.9V forward voltage lowering diode conduction drop
• 107W maximum power dissipation permitting high‑power operation
• 17A continuous drain current supporting substantial load currents
• 100 mΩ maximum RDS(on) reducing conduction losses in power stages
• 14 nC typical gate charge for efficient switching control
• 0.9V forward voltage lowering diode conduction drop
• 107W maximum power dissipation permitting high‑power operation
Applications
• Suitable for high‑voltage DC-DC converters in vehicles
• Ideal for motor‑drive half‑bridges in automotive electronics
• Used with power‑management modules in industrial supplies
• Can be used for switch‑mode power supply primary switches
• Ideal for motor‑drive half‑bridges in automotive electronics
• Used with power‑management modules in industrial supplies
• Can be used for switch‑mode power supply primary switches
What gate‑drive considerations should I make for switching performance?
Use a driver capable of delivering the gate charge within your targeted switching interval
the typical 14 nC charge lets you estimate peak gate current and switching losses for the chosen drive voltage.
How does the thermal environment affect continuous current capability?
The device’s 107W dissipation rating requires adequate PCB thermal design and heat‑sinking to maintain safe junction temperatures when carrying the specified 17A continuous current.
What protection limits apply to the device’s gate?
Ensure gate voltage remains within ±20V to avoid overstressing the gate oxide and consider transient suppression if exposed to inductive switching spikes.
How tolerant is the device to cold starts and high‑temperature operation?
It is specified to operate from low automotive temperatures up to elevated conditions, aiding use in systems experiencing broad ambient temperature swings.
Related links
- Infineon OptiMOS-T Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-263
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