Dual N/P-Channel-Channel MOSFET, 2.1 A, 3.4 A, 30 V, 6-Pin TSOT-26 Diodes Inc DMG6602SVT-7

RS Stock No.:: 822-2532P
Mfr. Part No.:: DMG6602SVT-7
Manufacturer:: DiodesZetex

Dual N/P-Channel-Channel MOSFET, 2.1 A, 3.4 A, 30 V, 6-Pin TSOT-26 Diodes Inc DMG6602SVT-7

This image is representative of the product range

76700 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days

Price Each (Supplied on a Reel) Quantities below 150 on continuous strip

PHP22.344

(exc. VAT)

PHP25.025

(inc. VAT)

Units	Per Unit
200 - 400	PHP22.344
500 - 900	PHP21.785
1000 - 1900	PHP21.24
2000 +	PHP20.709

RS Stock No.:: 822-2532P
Mfr. Part No.:: DMG6602SVT-7
Manufacturer:: DiodesZetex

DMG6602SVT-7 Complementary Pair Enhancement MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	2.1 A, 3.4 A
Maximum Drain Source Voltage	30 V
Package Type	TSOT-26
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	100 mΩ, 140 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3V
Maximum Power Dissipation	1.27 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Width	1.6mm
Length	2.9mm
Typical Gate Charge @ Vgs	7 nC @ 10 V, 9 nC @ 10 V
Number of Elements per Chip	2
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Height	0.9mm

Dual N/P-Channel-Channel MOSFET, 2.1 A, 3.4 A, 30 V, 6-Pin TSOT-26 Diodes Inc DMG6602SVT-7

Dual N/P-Channel MOSFET, Diodes Inc.