Vishay TrenchFET Gen III Type P-Channel MOSFET, 35 A, 20 V Enhancement, 8-Pin PowerPAK 1212-8 SIS415DNT-T1-GE3

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Subtotal (1 tape of 20 units)*

PHP384.18

(exc. VAT)

PHP430.28

(inc. VAT)

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Units
Per Unit
Per Tape*
20 - 280PHP19.209PHP384.18
300 - 580PHP18.633PHP372.66
600 - 1480PHP17.887PHP357.74
1500 - 2980PHP16.993PHP339.86
3000 +PHP15.973PHP319.46

*price indicative

Packaging Options:
RS Stock No.:
814-1304
Mfr. Part No.:
SIS415DNT-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

20V

Package Type

PowerPAK 1212-8

Series

TrenchFET Gen III

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0095Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

55.5nC

Maximum Gate Source Voltage Vgs

12 V

Maximum Power Dissipation Pd

52W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Length

3.4mm

Standards/Approvals

RoHS

Width

3.4 mm

Height

0.8mm

Automotive Standard

No

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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