Vishay Si4178DY Type N-Channel MOSFET, 12 A, 30 V Enhancement, 8-Pin SOIC SI4178DY-T1-GE3

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Subtotal (1 pack of 20 units)*

PHP586.04

(exc. VAT)

PHP656.36

(inc. VAT)

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  • 1,720 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
20 - 20PHP29.302PHP586.04
40 - 180PHP28.423PHP568.46
200 - 380PHP27.286PHP545.72
400 - 780PHP25.922PHP518.44
800 +PHP24.367PHP487.34

*price indicative

Packaging Options:
RS Stock No.:
812-3205
Mfr. Part No.:
SI4178DY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

30V

Series

Si4178DY

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

33mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

7.5nC

Forward Voltage Vf

0.85V

Maximum Power Dissipation Pd

5W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

25 V

Maximum Operating Temperature

150°C

Height

1.55mm

Width

4 mm

Standards/Approvals

No

Length

5mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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