N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-220AB IXYS IXFP26N50P3
- RS Stock No.:
- 802-4436
- Mfr. Part No.:
- IXFP26N50P3
- Manufacturer:
- IXYS
Temporarily out of stock - back order for despatch 28/02/2025, delivery within 10 working days from desptach date
Added
Price Each (In a Pack of 2)
PHP445.535
(exc. VAT)
PHP498.999
(inc. VAT)
| Units | Per Unit | Per Pack* |
| 2 - 8 | PHP445.535 | PHP891.07 |
| 10 - 38 | PHP432.165 | PHP864.33 |
| 40 - 98 | PHP419.20 | PHP838.40 |
| 100 - 198 | PHP406.62 | PHP813.24 |
| 200 + | PHP394.42 | PHP788.84 |
| *price indicative | ||
- RS Stock No.:
- 802-4436
- Mfr. Part No.:
- IXFP26N50P3
- Manufacturer:
- IXYS
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 26 A |
| Maximum Drain Source Voltage | 500 V |
| Package Type | TO-220AB |
| Series | HiperFET, Polar3 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 240 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 500 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Transistor Material | Si |
| Width | 4.83mm |
| Typical Gate Charge @ Vgs | 42 nC @ 10 V |
| Length | 10.66mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Height | 16mm |