N-Channel MOSFET, 16 A, 60 V, 3-Pin DPAK onsemi RFD16N06LESM9A
- RS Stock No.:
- 802-2146
- Mfr. Part No.:
- RFD16N06LESM9A
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)**
PHP499.80
(exc. VAT)
PHP559.80
(inc. VAT)
2435 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for over PHP7,000.00 (ex VAT)
Units | Per Unit | Per Pack** |
|---|---|---|
| 5 - 20 | PHP99.96 | PHP499.80 |
| 25 - 45 | PHP96.40 | PHP482.00 |
| 50 - 245 | PHP92.842 | PHP464.21 |
| 250 - 495 | PHP76.002 | PHP380.01 |
| 500 + | PHP67.102 | PHP335.51 |
**price indicative
- RS Stock No.:
- 802-2146
- Mfr. Part No.:
- RFD16N06LESM9A
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 16 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 47 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 90 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +10 V | |
| Length | 6.73mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 51 nC @ 10 V | |
| Width | 6.22mm | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.39mm | |
Select all | ||
|---|---|---|
Manufacturer onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 16 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 47 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 90 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +10 V | ||
Length 6.73mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 51 nC @ 10 V | ||
Width 6.22mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 2.39mm | ||
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