IXYS Type N-Channel MOSFET, 24 A, 1 kV Enhancement, 3-Pin TO-264
- RS Stock No.:
- 801-1405P
- Mfr. Part No.:
- IXFK24N100Q3
- Manufacturer:
- IXYS
This image is representative of the product range
Bulk discount available
Subtotal 10 units (supplied in a tube)*
PHP20,626.00
(exc. VAT)
PHP23,101.10
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 50 unit(s) shipping from February 11, 2026
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Units | Per Unit |
|---|---|
| 10 - 49 | PHP2,062.60 |
| 50 - 99 | PHP2,010.05 |
| 100 - 249 | PHP1,976.10 |
| 250 + | PHP1,956.35 |
*price indicative
- RS Stock No.:
- 801-1405P
- Mfr. Part No.:
- IXFK24N100Q3
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Package Type | TO-264 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 440mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 140nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 1kW | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.13 mm | |
| Length | 19.96mm | |
| Height | 26.16mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Distrelec Product Id | 30253345 | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Package Type TO-264 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 440mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 140nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 1kW | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Width 5.13 mm | ||
Length 19.96mm | ||
Height 26.16mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Distrelec Product Id 30253345 | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-264
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- IXYS Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-264 IXFK32N100Q3
- IXYS Type N-Channel MOSFET 1 kV Enhancement, 3-Pin ISOPLUS247
- IXYS Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 1 kV Enhancement, 3-Pin PLUS247
- IXYS Type N-Channel MOSFET 1 kV Enhancement, 3-Pin ISOPLUS247 IXFR24N100Q3