Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET, 6 A, 20 V Enhancement, 3-Pin SOT-23 SQ2310ES-T1_BE3
- RS Stock No.:
- 787-9443P
- Mfr. Part No.:
- SQ2310ES-T1_BE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal 20 units (supplied on a continuous strip)*
PHP917.78
(exc. VAT)
PHP1,027.92
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Being discontinued
- Final 1,860 unit(s), ready to ship from another location
Units | Per Unit |
|---|---|
| 20 - 40 | PHP45.889 |
| 50 - 90 | PHP44.513 |
| 100 - 190 | PHP43.178 |
| 200 + | PHP41.882 |
*price indicative
- RS Stock No.:
- 787-9443P
- Mfr. Part No.:
- SQ2310ES-T1_BE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | TrenchFET Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | SQ Rugged | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.03Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | ±8 V | |
| Typical Gate Charge Qg @ Vgs | 8.5nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.02mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS: 2002/95/EC | |
| Width | 1.4 mm | |
| Length | 3.04mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type TrenchFET Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series SQ Rugged | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.03Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs ±8 V | ||
Typical Gate Charge Qg @ Vgs 8.5nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 1.02mm | ||
Standards/Approvals IEC 61249-2-21, RoHS: 2002/95/EC | ||
Width 1.4 mm | ||
Length 3.04mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Advantages of SQ Rugged Series MOSFETs
• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
MOSFET Transistors, Vishay Semiconductor
Approvals
AEC-Q101