Dual N-Channel MOSFET, 16 A, 28 A, 30 V, 8-Pin PowerPAIR Vishay SIZ918DT-T1-GE3

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Subtotal 25 units (supplied on a continuous strip)*

PHP642.35

(exc. VAT)

PHP719.425

(inc. VAT)

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Units
Per Unit
25 - 95PHP25.694
100 - 245PHP25.146
250 - 495PHP24.596
500 +PHP24.048

*price indicative

Packaging Options:
RS Stock No.:
787-9406P
Mfr. Part No.:
SIZ918DT-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

16 A, 28 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAIR

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.5 mΩ, 14.5 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

29 W, 100 W

Transistor Configuration

Series

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5.1mm

Transistor Material

Si

Width

6.1mm

Typical Gate Charge @ Vgs

14 nC @ 10 V, 67.3 nC @ 10 V

Height

0.8mm

Minimum Operating Temperature

-55 °C

Series

PowerPAIR

Dual N-Channel MOSFET PowerPAIR®, Vishay Semiconductor


High- and low-side MOSFETs in one compact package, while still obtaining low on-resistance and high current comparable to two discretes.


MOSFET Transistors, Vishay Semiconductor

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