Dual N-Channel MOSFET, 16 A, 28 A, 30 V, 8-Pin PowerPAIR Vishay SIZ918DT-T1-GE3
- RS Stock No.:
- 787-9406P
- Mfr. Part No.:
- SIZ918DT-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal 25 units (supplied on a continuous strip)*
PHP642.35
(exc. VAT)
PHP719.425
(inc. VAT)
Stock information currently inaccessible
Units | Per Unit |
|---|---|
| 25 - 95 | PHP25.694 |
| 100 - 245 | PHP25.146 |
| 250 - 495 | PHP24.596 |
| 500 + | PHP24.048 |
*price indicative
- RS Stock No.:
- 787-9406P
- Mfr. Part No.:
- SIZ918DT-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 16 A, 28 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | PowerPAIR | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 4.5 mΩ, 14.5 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 29 W, 100 W | |
| Transistor Configuration | Series | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 2 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 5.1mm | |
| Transistor Material | Si | |
| Width | 6.1mm | |
| Typical Gate Charge @ Vgs | 14 nC @ 10 V, 67.3 nC @ 10 V | |
| Height | 0.8mm | |
| Minimum Operating Temperature | -55 °C | |
| Series | PowerPAIR | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 16 A, 28 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type PowerPAIR | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 4.5 mΩ, 14.5 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 29 W, 100 W | ||
Transistor Configuration Series | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 2 | ||
Maximum Operating Temperature +150 °C | ||
Length 5.1mm | ||
Transistor Material Si | ||
Width 6.1mm | ||
Typical Gate Charge @ Vgs 14 nC @ 10 V, 67.3 nC @ 10 V | ||
Height 0.8mm | ||
Minimum Operating Temperature -55 °C | ||
Series PowerPAIR | ||
Dual N-Channel MOSFET PowerPAIR®, Vishay Semiconductor
High- and low-side MOSFETs in one compact package, while still obtaining low on-resistance and high current comparable to two discretes.
MOSFET Transistors, Vishay Semiconductor
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