Vishay Si7615ADN Type P-Channel MOSFET, 35 A, 20 V Enhancement, 8-Pin PowerPAK 1212-8 SI7615ADN-T1-GE3
- RS Stock No.:
- 787-9248
- Mfr. Part No.:
- SI7615ADN-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP349.86
(exc. VAT)
PHP391.84
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- 20 left, ready to ship from another location
- Final 4,350 unit(s) shipping from January 02, 2026
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP34.986 | PHP349.86 |
| 20 - 90 | PHP33.936 | PHP339.36 |
| 100 - 190 | PHP31.898 | PHP318.98 |
| 200 - 390 | PHP29.027 | PHP290.27 |
| 400 + | PHP25.544 | PHP255.44 |
*price indicative
- RS Stock No.:
- 787-9248
- Mfr. Part No.:
- SI7615ADN-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | PowerPAK 1212-8 | |
| Series | Si7615ADN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0044Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±12 V | |
| Maximum Power Dissipation Pd | 52W | |
| Typical Gate Charge Qg @ Vgs | 59nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.4mm | |
| Height | 1.12mm | |
| Width | 3.4 mm | |
| Standards/Approvals | Lead (Pb)-Free | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type PowerPAK 1212-8 | ||
Series Si7615ADN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0044Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±12 V | ||
Maximum Power Dissipation Pd 52W | ||
Typical Gate Charge Qg @ Vgs 59nC | ||
Maximum Operating Temperature 150°C | ||
Length 3.4mm | ||
Height 1.12mm | ||
Width 3.4 mm | ||
Standards/Approvals Lead (Pb)-Free | ||
Automotive Standard No | ||
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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