Vishay IRFL Type N-Channel MOSFET, 1.5 A, 100 V Enhancement, 4-Pin SOT-223 IRFL110TRPBF
- RS Stock No.:
- 787-9033
- Mfr. Part No.:
- IRFL110TRPBF
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP360.64
(exc. VAT)
PHP403.92
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 130 unit(s) ready to ship from another location
- Plus 8,510 unit(s) shipping from January 02, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP36.064 | PHP360.64 |
| 20 - 40 | PHP35.58 | PHP355.80 |
| 50 - 90 | PHP34.855 | PHP348.55 |
| 100 - 190 | PHP34.149 | PHP341.49 |
| 200 + | PHP33.873 | PHP338.73 |
*price indicative
- RS Stock No.:
- 787-9033
- Mfr. Part No.:
- IRFL110TRPBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.5A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-223 | |
| Series | IRFL | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 540mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 8.3nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2.5V | |
| Maximum Power Dissipation Pd | 3.1W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.8mm | |
| Width | 3.7 mm | |
| Standards/Approvals | No | |
| Length | 6.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.5A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-223 | ||
Series IRFL | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 540mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 8.3nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2.5V | ||
Maximum Power Dissipation Pd 3.1W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 1.8mm | ||
Width 3.7 mm | ||
Standards/Approvals No | ||
Length 6.7mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
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