onsemi NTZS3151P Type P-Channel MOSFET, 950 mA, 20 V Enhancement, 6-Pin SOT-563 NTZS3151PT1G
- RS Stock No.:
- 780-4806
- Mfr. Part No.:
- NTZS3151PT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
PHP353.875
(exc. VAT)
PHP396.35
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from May 08, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | PHP14.155 | PHP353.88 |
| 50 - 100 | PHP12.927 | PHP323.18 |
| 125 - 225 | PHP12.368 | PHP309.20 |
| 250 - 475 | PHP11.92 | PHP298.00 |
| 500 + | PHP11.772 | PHP294.30 |
*price indicative
- RS Stock No.:
- 780-4806
- Mfr. Part No.:
- NTZS3151PT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 950mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-563 | |
| Series | NTZS3151P | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 240mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 210mW | |
| Typical Gate Charge Qg @ Vgs | 5.6nC | |
| Forward Voltage Vf | -0.9V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 1.7mm | |
| Width | 1.3 mm | |
| Height | 0.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 950mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-563 | ||
Series NTZS3151P | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 240mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 210mW | ||
Typical Gate Charge Qg @ Vgs 5.6nC | ||
Forward Voltage Vf -0.9V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 1.7mm | ||
Width 1.3 mm | ||
Height 0.6mm | ||
Automotive Standard No | ||
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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