STMicroelectronics MDmesh Type N-Channel MOSFET, 5 A, 600 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 761-2843
- Mfr. Part No.:
- STF7NM60N
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP439.04
(exc. VAT)
PHP491.725
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from April 27, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP87.808 | PHP439.04 |
| 25 - 95 | PHP85.174 | PHP425.87 |
| 100 - 245 | PHP82.618 | PHP413.09 |
| 250 - 495 | PHP80.14 | PHP400.70 |
| 500 + | PHP77.738 | PHP388.69 |
*price indicative
- RS Stock No.:
- 761-2843
- Mfr. Part No.:
- STF7NM60N
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | MDmesh | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 20W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Height | 16.4mm | |
| Width | 4.6 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series MDmesh | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 20W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Height 16.4mm | ||
Width 4.6 mm | ||
Automotive Standard No | ||
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics MDmesh Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 STF7NM60N
- STMicroelectronics MDmesh Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- STMicroelectronics MDmesh Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin IPAK (TO-251)
- STMicroelectronics MDmesh Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 STD7NM60N
- STMicroelectronics MDmesh Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin IPAK (TO-251) STU7NM60N
- STMicroelectronics MDmesh Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
