N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220FP STMicroelectronics STF11NM60ND

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

N-Channel FDmesh™ Power MOSFET, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 10 A
Maximum Drain Source Voltage 600 V
Package Type TO-220FP
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 450 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 5V
Minimum Gate Threshold Voltage 3V
Maximum Power Dissipation 25 W
Transistor Configuration Single
Maximum Gate Source Voltage -25 V, +25 V
Number of Elements per Chip 1
Length 10.4mm
Transistor Material Si
Maximum Operating Temperature +150 °C
Height 16.4mm
Series FDmesh
Typical Gate Charge @ Vgs 30 nC @ 10 V
Width 4.6mm
105 In Global stock for delivery within 4 - 8 working days
Price Each
PHP 168.44
(exc. VAT)
PHP 188.65
(inc. VAT)
units
Per Unit
1 - 9
PHP168.44
10 - 49
PHP138.47
50 - 99
PHP135.54
100 - 249
PHP123.15
250 +
PHP111.10
Packaging Options: