onsemi PowerTrench Type N-Channel MOSFET, 62 A, 200 V Enhancement, 3-Pin TO-263 FDB2614
- RS Stock No.:
- 759-8967
- Mfr. Part No.:
- FDB2614
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
PHP254.02
(exc. VAT)
PHP284.50
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 1,740 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 1 - 9 | PHP254.02 |
| 10 - 49 | PHP229.01 |
| 50 - 99 | PHP227.02 |
| 100 - 249 | PHP219.79 |
| 250 + | PHP217.14 |
*price indicative
- RS Stock No.:
- 759-8967
- Mfr. Part No.:
- FDB2614
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-263 | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 27mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 76nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 260W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 11.33 mm | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-263 | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 27mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 76nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 260W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 11.33 mm | ||
Height 4.83mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi PowerTrench Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- onsemi PowerTrench Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- onsemi PowerTrench Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 FDP2614
- onsemi PowerTrench Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-263
- onsemi PowerTrench Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263
- onsemi PowerTrench Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263
- onsemi PowerTrench Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263
- onsemi PowerTrench Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-263