onsemi Isolated 2 Type N-Channel Power MOSFET, 510 mA, 50 V Enhancement, 6-Pin SOT-23 NDC7002N
- RS Stock No.:
- 739-0161
- Mfr. Part No.:
- NDC7002N
- Manufacturer:
- onsemi
This image is representative of the product range
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Subtotal (1 pack of 5 units)*
PHP106.33
(exc. VAT)
PHP119.09
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 7,645 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP21.266 | PHP106.33 |
| 25 - 95 | PHP19.14 | PHP95.70 |
| 100 - 245 | PHP17.226 | PHP86.13 |
| 250 - 495 | PHP15.504 | PHP77.52 |
| 500 + | PHP13.952 | PHP69.76 |
*price indicative
- RS Stock No.:
- 739-0161
- Mfr. Part No.:
- NDC7002N
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 510mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 4Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | 150°C | |
| Maximum Power Dissipation Pd | 960mW | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 1nC | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Height | 1mm | |
| Width | 1.7 mm | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 510mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 4Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature 150°C | ||
Maximum Power Dissipation Pd 960mW | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 1nC | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Height 1mm | ||
Width 1.7 mm | ||
Standards/Approvals No | ||
Length 3mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Enhancement Mode Dual MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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