onsemi QFET N-Channel MOSFET, 16 A, 250 V, 3-Pin DPAK FQD16N25CTM

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Subtotal (1 pack of 5 units)*

PHP147.04

(exc. VAT)

PHP164.685

(inc. VAT)

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Per Pack*
5 - 20PHP29.408PHP147.04
25 - 95PHP27.36PHP136.80
100 - 245PHP22.438PHP112.19
250 - 495PHP20.418PHP102.09
500 +PHP18.638PHP93.19

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Packaging Options:
RS Stock No.:
671-0964
Mfr. Part No.:
FQD16N25CTM
Manufacturer:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

250 V

Package Type

DPAK (TO-252)

Series

QFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

6.1mm

Length

6.6mm

Number of Elements per Chip

1

Transistor Material

Si

Typical Gate Charge @ Vgs

41 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

2.3mm

COO (Country of Origin):
CN

QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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