N-Channel MOSFET, 65 A, 200 V, 3-Pin TO-247AC Infineon IRFP4227PBF

RS Stock No.:: 650-4772
Mfr. Part No.:: IRFP4227PBF
Manufacturer:: Infineon

N-Channel MOSFET, 65 A, 200 V, 3-Pin TO-247AC Infineon IRFP4227PBF

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PHP247.35

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PHP277.03

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Units	Per Unit
1 - 9	PHP247.35
10 - 49	PHP239.93
50 - 99	PHP232.73
100 - 249	PHP225.75
250 +	PHP218.96

**price indicative

RS Stock No.:: 650-4772
Mfr. Part No.:: IRFP4227PBF
Manufacturer:: Infineon

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

Motor Control MOSFET

Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.

Synchronous Rectifier MOSFET

A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.

Infineon HEXFET Series MOSFET, 65A Maximum Continuous Drain Current, 330W Maximum Power Dissipation - IRFP4227PBF

This MOSFET functions as a vital component in contemporary electronic applications, offering dependable control and switching for high-power systems. It delivers robust performance and efficiency, making it suitable for a variety of industrial tasks, particularly in settings where high thermal resistance and low conduction losses are essential. The enhancement mode design facilitates optimal operation under diverse conditions, thereby making it ideal for automation, electrical systems, and mechanical applications.

Features & Benefits

• Provides 65A continuous drain current for intensive applications
• Operates efficiently at a maximum drain-source voltage of 200V
• Low RDS(on) contributes to energy efficiency during use
• Rated for high temperature tolerance up to 175°C
• Optimised for fast switching with minimal fall and rise times
• Offers excellent repetitive avalanche capability for enhanced system reliability

Applications

• Utilised in energy recovery systems to enhance efficiency
• Compatible with PDP sustain for effective performance
• Suitable for high-power motor drive circuits requiring accurate control
• Employed in switching power supplies within automation processes
• Used in professional audio amplifiers for effective output handling

What is the maximum current that can be handled at elevated temperatures?

It can manage a continuous drain current of 46A at 100°C, ensuring functionality in tough environments.

How does this component perform under pulsed conditions?

The pulsed drain current can reach up to 130A, making it appropriate for transient applications.

What are the cooling requirements when using this device?

It has a thermal resistance of 0.45°C/W from junction to case, requiring effective heat dissipation mechanisms for optimal operation.

What type of mounting is required for installation?

Installation necessitates through-hole mounting, suitable for robust applications needing solid connections.

How does the gate charge impact switching speed?

It features a typical total gate charge of 70nC, enabling quick and efficient switching, which is crucial in high-speed applications.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	65 A
Maximum Drain Source Voltage	200 V
Series	HEXFET
Package Type	TO-247AC
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	25 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	330 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Typical Gate Charge @ Vgs	70 nC @ 10 V
Number of Elements per Chip	1
Transistor Material	Si
Width	5.3mm
Length	15.9mm
Maximum Operating Temperature	+175 °C
Forward Diode Voltage	1.3V
Height	20.3mm
Minimum Operating Temperature	-40 °C