Vishay IRFI Type P-Channel MOSFET, 2 A, 200 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 543-2193
- Mfr. Part No.:
- IRFI9610GPBF
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP568.40
(exc. VAT)
PHP636.60
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 15 unit(s) ready to ship from another location
- Plus 65 unit(s) shipping from January 02, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP113.68 | PHP568.40 |
| 25 - 95 | PHP111.406 | PHP557.03 |
| 100 - 245 | PHP109.59 | PHP547.95 |
| 250 - 495 | PHP107.612 | PHP538.06 |
| 500 + | PHP104.13 | PHP520.65 |
*price indicative
- RS Stock No.:
- 543-2193
- Mfr. Part No.:
- IRFI9610GPBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | IRFI | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -5.8V | |
| Maximum Power Dissipation Pd | 27W | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.8mm | |
| Length | 10.63mm | |
| Standards/Approvals | No | |
| Width | 4.83 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series IRFI | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -5.8V | ||
Maximum Power Dissipation Pd 27W | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 9.8mm | ||
Length 10.63mm | ||
Standards/Approvals No | ||
Width 4.83 mm | ||
Automotive Standard No | ||
The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink.
Dynamic dV/dt rating
Low thermal resistance
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