N-Channel MOSFET, 1.3 A, 100 V, 4-Pin HVMDIP Vishay IRLD120PBF
- RS Stock No.:
- 543-0484P
- Mfr. Part No.:
- IRLD120PBF
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (10 bags of 1 unit)**
PHP983.90
(exc. VAT)
PHP1,102.00
(inc. VAT)
376 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for over PHP7,000.00 (ex VAT)
Units | Per Unit |
|---|---|
| 10 - 49 | PHP97.12 |
| 50 - 99 | PHP94.58 |
| 100 - 249 | PHP92.63 |
| 250 + | PHP90.70 |
**price indicative
- RS Stock No.:
- 543-0484P
- Mfr. Part No.:
- IRLD120PBF
- Manufacturer:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.3 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | HVMDIP | |
| Mounting Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 270 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 1.3 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -10 V, +10 V | |
| Width | 6.29mm | |
| Length | 5mm | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 12 nC @ 5 V | |
| Height | 3.37mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.3 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type HVMDIP | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 270 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 1.3 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -10 V, +10 V | ||
Width 6.29mm | ||
Length 5mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 12 nC @ 5 V | ||
Height 3.37mm | ||
Minimum Operating Temperature -55 °C | ||