P-Channel MOSFET, 31 A, 55 V, 3-Pin TO-220AB Infineon IRF5305PBF

RS Stock No.:: 541-1736
Mfr. Part No.:: IRF5305PBF
Manufacturer:: Infineon

P-Channel MOSFET, 31 A, 55 V, 3-Pin TO-220AB Infineon IRF5305PBF

96 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days

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1 +	PHP83.98

RS Stock No.:: 541-1736
Mfr. Part No.:: IRF5305PBF
Manufacturer:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	31 A
Maximum Drain Source Voltage	55 V
Series	HEXFET
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	60 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	110 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Number of Elements per Chip	1
Length	10.54mm
Width	4.69mm
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	63 nC @ 10 V
Height	8.77mm
Minimum Operating Temperature	-55 °C