Infineon HEXFET Type N-Channel MOSFET, 84 A, 60 V Enhancement, 3-Pin TO-220

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 unit)*

PHP60.76

(exc. VAT)

PHP68.05

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 3 unit(s) ready to ship from another location
  • Plus 1,008 unit(s) shipping from January 02, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
1 - 4PHP60.76
5 +PHP50.00

*price indicative

RS Stock No.:
541-1714
Distrelec Article No.:
303-41-261
Mfr. Part No.:
IRF1010EPBF
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

84A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

12mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

130nC

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

200W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

10.54mm

Standards/Approvals

No

Width

4.69 mm

Height

8.77mm

Automotive Standard

No

Distrelec Product Id

30341261

Infineon HEXFET Series MOSFET, 84A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRF1010EPBF


This MOSFET is designed for high performance in various electronic applications. Its low on-resistance characteristics and capacity for high continuous drain currents make it a key component for engineers in automation and power management systems. The device performs well in rugged environments, ensuring consistent operation across a broad temperature range.

Features & Benefits


• Low RDS(on) contributes to minimal power loss at high currents

• High continuous drain current capability of up to 84A enhances efficiency

• Compact TO-220AB package allows for easy mounting

• Fast switching capabilities improve overall circuit performance

• Fully avalanche rated for added device protection

Applications


• Power supply circuits for efficient voltage regulation

• Motor control systems for precise operation

• Driver circuits in high current

• Signal amplification in electronic devices

What are the thermal resistance values for this product?


The junction-to-case thermal resistance is 0.75°C/W, and the case-to-sink thermal resistance on a flat, greased surface is 0.50°C/W, enabling efficient heat dissipation.

Can it operate safely in environments with high temperatures?


Yes, it functions effectively at temperatures up to 175°C, making it suitable for applications where heat is a concern.

What type of current can it handle at high temperatures?


At a case temperature of 100°C, it can manage a continuous drain current of 59A, ensuring dependable operation under load.

How does the gate charge affect its performance?


With a typical gate charge of 130 nC at 10V, it enables rapid switching and efficient operation in dynamic applications.

N-Channel Power MOSFET 60V to 80V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Related links