Infineon CoolMOS C3 Type N-Channel MOSFET, 20.7 A, 650 V Enhancement, 3-Pin TO-247 SPW20N60C3FKSA1

RS Stock No.:: 462-3449
Mfr. Part No.:: SPW20N60C3FKSA1
Manufacturer:: Infineon

Infineon CoolMOS C3 Type N-Channel MOSFET, 20.7 A, 650 V Enhancement, 3-Pin TO-247 SPW20N60C3FKSA1

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PHP286.94

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PHP321.37

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28 unit(s) ready to ship from another location
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Units	Per Unit
1 - 9	PHP286.94
10 +	PHP278.33

*price indicative

RS Stock No.:: 462-3449
Mfr. Part No.:: SPW20N60C3FKSA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	20.7A
	Maximum Drain Source Voltage Vds	650V
	Series	CoolMOS C3
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	190mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	87nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	208W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Length	15.9mm
	Standards/Approvals	No
	Height	20.95mm
	Width	5.3 mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 20.7A
	Maximum Drain Source Voltage Vds 650V
	Series CoolMOS C3
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 190mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 87nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 208W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Length 15.9mm
	Standards/Approvals No
	Height 20.95mm
	Width 5.3 mm
	Automotive Standard AEC-Q101

Infineon CoolMOS™ C3 Series MOSFET, 21A Maximum Continuous Drain Current, 208W Maximum Power Dissipation - SPW20N60C3FKSA1

This MOSFET is vital for numerous electronic applications, engineered to enhance efficiency across various tasks. It performs well in high-power environments, serving the automation, electrical, and mechanical sectors. With durable specifications, it ensures stable performance while managing substantial power loads and optimising energy usage.

Features & Benefits

• N-channel configuration enhances conduction capabilities

• Maximum continuous drain current of 21A supports intensive applications

• High voltage rating of 650V provides reliability in challenging conditions

• Low gate charge facilitates efficient switching, reducing energy losses

• Excellent thermal performance allows operation at elevated temperatures

• Designed for through-hole mounting, simplifying assembly procedures

Applications

• Power supply regulation and management in industrial systems

• Motor control systems for efficient power delivery

• Utilised in DC-DC converters for high voltage

• Integrated into renewable energy systems for effective energy conversion

• Employed in power electronics for improved device performance

What is the maximum operating temperature for this component?

It operates efficiently at a maximum temperature of +150°C, suited for high-temperature environments without compromising performance.

How does the low gate charge benefit device operation?

A low gate charge enables faster switching speeds, significantly reducing switching losses and enhancing overall efficiency during operation.

Can this MOSFET handle repeated high-temperature cycling?

Yes, it is designed to maintain its electrical characteristics over numerous thermal cycles, ensuring longevity in variable temperature environments.

Is there a specific mounting style recommended for this device?

This device is intended for through-hole mounting, facilitating easier PCB assembly and providing stable mechanical connections.

What safety precautions should be taken during installation?

Ensure the gate-source voltage does not exceed specified limits (-20V to +20V) to prevent device damage, and follow standard ESD precautions to avoid static damage.