STMicroelectronics STW65N Type N-Channel MOSFET, 54 A, 650 V Enhancement, 3-Pin TO-247-4 STW65N045M9-4

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PHP6,054.10

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PHP6,780.60

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10 +PHP605.41

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Packaging Options:
RS Stock No.:
287-7055P
Mfr. Part No.:
STW65N045M9-4
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

54A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247-4

Series

STW65N

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±30 V

Maximum Power Dissipation Pd

312W

Typical Gate Charge Qg @ Vgs

8nC

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET is based on the most innovative super junction MDmesh M9 technology. The silicon based M9 technology benefits from a multi drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on resistance and reduced gate charge values, among all silicon based fast switching super junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.

Higher dv/dt capability

Excellent switching performance

Easy to drive

100 percent avalanche tested