STMicroelectronics STP80N Type N-Channel MOSFET, 5 A, 800 V Enhancement, 3-Pin TO-220 STP80N1K1K6

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PHP204.33

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PHP228.85

(inc. VAT)

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2 - 8PHP102.165PHP204.33
10 +PHP91.845PHP183.69

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Packaging Options:
RS Stock No.:
287-7047
Mfr. Part No.:
STP80N1K1K6
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

800V

Series

STP80N

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.1mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.5V

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

62W

Typical Gate Charge Qg @ Vgs

5.7nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best in class on resistance per area and gate charge for applications requiring superior power density and high efficiency.

Worldwide best FOM

Ultra low gate charge

100 percent avalanche tested

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