Vishay Type N-Channel MOSFET, 20 A, 500 V Enhancement, 3-Pin TO-247 IRFP460PBF
- RS Stock No.:
- 281-6034P
- Mfr. Part No.:
- IRFP460PBF
- Manufacturer:
- Vishay
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 281-6034P
- Mfr. Part No.:
- IRFP460PBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.27Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 280W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 210nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.25mm | |
| Width | 15.87 mm | |
| Standards/Approvals | RoHS-compliant | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.27Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 280W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 210nC | ||
Maximum Operating Temperature 150°C | ||
Length 16.25mm | ||
Width 15.87 mm | ||
Standards/Approvals RoHS-compliant | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay power MOSFETs offer fast switching, rugged design and low on-resistance. It is cost-effective.
Repetitive avalanche rated
Fast switching
Ease of paralleling
