Vishay SI Type N-Channel MOSFET, 1.8 A, 100 V Enhancement, 3-Pin SOT-23 SI2392BDS-T1-GE3

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Subtotal (1 pack of 20 units)*

PHP574.28

(exc. VAT)

PHP643.20

(inc. VAT)

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  • 2,960 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
20 - 20PHP28.714PHP574.28
40 - 80PHP25.125PHP502.50
100 - 280PHP22.394PHP447.88
300 - 980PHP21.926PHP438.52
1000 +PHP21.458PHP429.16

*price indicative

Packaging Options:
RS Stock No.:
279-9893
Mfr. Part No.:
SI2392BDS-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

1.8A

Maximum Drain Source Voltage Vds

100V

Series

SI

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.149Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

7.1nC

Maximum Power Dissipation Pd

1.1W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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