Infineon OptiMOS Type N-Channel MOSFET, 106 A, 30 V Enhancement, 8-Pin PG-TSDSON-8FL BSZ0902NSATMA1

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Subtotal (1 reel of 5000 units)*

PHP114,440.00

(exc. VAT)

PHP128,175.00

(inc. VAT)

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Units
Per Unit
Per Reel*
5000 +PHP22.888PHP114,440.00

*price indicative

RS Stock No.:
273-5247
Mfr. Part No.:
BSZ0902NSATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

106A

Maximum Drain Source Voltage Vds

30V

Series

OptiMOS

Package Type

PG-TSDSON-8FL

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

26nC

Maximum Power Dissipation Pd

48W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS, IEC61249-2-21, DIN IEC 68-1: 55/175/56

Automotive Standard

No

The Infineon MOSFET is a N channel power MOSFET. This MOSFET has an excellent gate charge. It is qualified according to JEDEC for target applications and it is 100 percent avalanche tested. It is a optimized for high performance buck converter.

Halogen free

RoHS compliant

Pb free lead plating

Very low on resistance

Superior thermal resistance

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