Infineon HEXFET Type N-Channel MOSFET, 160 A, 75 V DirectFET AUIRF7759L2TR
- RS Stock No.:
- 273-5218
- Mfr. Part No.:
- AUIRF7759L2TR
- Manufacturer:
- Infineon
This image is representative of the product range
Subtotal (1 reel of 4000 units)*
PHP1,315,932.00
(exc. VAT)
PHP1,473,844.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from March 27, 2026
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Units | Per Unit | Per Reel* |
|---|---|---|
| 4000 + | PHP328.983 | PHP1,315,932.00 |
*price indicative
- RS Stock No.:
- 273-5218
- Mfr. Part No.:
- AUIRF7759L2TR
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 160A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | DirectFET | |
| Series | HEXFET | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 160A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type DirectFET | ||
Series HEXFET | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MX
The Infineon Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET packaging platform coupled with the latest silicon technology allows it to offer substantial system level savings and performance improvement specifically in motor drive, high frequency DC to DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing techniques to achieve low on resistance and low Qg per silicon area. Additional features of this MOSFET are high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications.
RoHS compliant
Dual sided cooling
High power density
Automotive qualified
Low parasitic parameters
Lead free and halogen free
Advanced process technology
Related links
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