Infineon OptiMOS Type N-Channel MOSFET, 57 A, 650 V Enhancement, 10-Pin PG-HDSOP-10-1

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PHP326.04

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PHP365.16

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1 - 49PHP326.04
50 - 99PHP316.26
100 - 249PHP306.77
250 - 499PHP297.56
500 +PHP288.63

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RS Stock No.:
273-2788
Mfr. Part No.:
IPDD60R050G7XTMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

57A

Maximum Drain Source Voltage Vds

650V

Package Type

PG-HDSOP-10-1

Series

OptiMOS

Mount Type

Surface

Pin Count

10

Maximum Drain Source Resistance Rds

50mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

278W

Typical Gate Charge Qg @ Vgs

68nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon MOSFET is easy to use and has the highest quality standards. It is possibility to increase economies of scales by usage in PFC and PWM topologies in the application. It reducing parasitic source inductance by Kelvin Source improves efficiency by faster switching and ease of use due to less ringing.

Total Pb free

RoHS compliant

Easy visual inspection leads

Improve thermal performance

Suitable for hard and soft switching

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