Vishay SQJ Type N-Channel MOSFET, 66 A, 80 V Enhancement, 4-Pin PowerPAK SO-8L SQJ186ELP-T1_GE3
- RS Stock No.:
- 268-8366
- Mfr. Part No.:
- SQJ186ELP-T1_GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
PHP590.20
(exc. VAT)
PHP661.00
(inc. VAT)
FREE delivery for orders over ₱5,000.00
Temporarily out of stock
- 2,980 unit(s) shipping from August 31, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 40 | PHP59.02 | PHP590.20 |
| 50 - 90 | PHP57.831 | PHP578.31 |
| 100 - 240 | PHP46.027 | PHP460.27 |
| 250 - 990 | PHP45.092 | PHP450.92 |
| 1000 + | PHP29.975 | PHP299.75 |
*price indicative
- RS Stock No.:
- 268-8366
- Mfr. Part No.:
- SQJ186ELP-T1_GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 66A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK SO-8L | |
| Series | SQJ | |
| Mount Type | PCB | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.032Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Power Dissipation Pd | 135W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 4.9mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 66A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK SO-8L | ||
Series SQJ | ||
Mount Type PCB | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.032Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Power Dissipation Pd 135W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 4.9mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay automotive N channel TrenchFET generation 4 power MOSFET is lead Pb and halogen free device. It is single configuration device and that has independent of operating temperature.
AEC Q101 qualified
ROHS compliant
UIS tested 100 percent
Related links
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