ROHM R6007END3 Type N-Channel MOSFET, 7 A, 600 V Enhancement, 3-Pin TO-252 R6007END3TL1
- RS Stock No.:
- 264-3778
- Mfr. Part No.:
- R6007END3TL1
- Manufacturer:
- ROHM
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP449.46
(exc. VAT)
PHP503.395
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 2,445 unit(s) shipping from December 29, 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 45 | PHP89.892 | PHP449.46 |
| 50 - 95 | PHP87.196 | PHP435.98 |
| 100 - 245 | PHP81.964 | PHP409.82 |
| 250 - 995 | PHP74.588 | PHP372.94 |
| 1000 + | PHP65.638 | PHP328.19 |
*price indicative
- RS Stock No.:
- 264-3778
- Mfr. Part No.:
- R6007END3TL1
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | R6007END3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.62Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Power Dissipation Pd | 78W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series R6007END3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.62Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Power Dissipation Pd 78W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The ROHM low-noise power MOSFET is suitable for switching power supply, it is low on-resistance, low radiation noise and Pb-free plating and RoHS compliant.
Fast switching
Parallel use is easy
Related links
- ROHM R6007END3 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- Toshiba TK Type N-Channel MOSFET 600 V EnhancementRVQ(S
- ROHM R60 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220FM R6010YNXC7G
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 STP9NK60ZFP
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 STP9NK60Z
- Infineon CoolMOS CFD7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IPA60R210CFD7XKSA1
- Infineon CoolMOS CFD7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220