Infineon HEXFET Type N-Channel MOSFET, 16 A, 100 V Enhancement, 3-Pin TO-251 IRFU3910PBF

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Subtotal 50 units (supplied in a tube)*

PHP1,806.10

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PHP2,022.85

(inc. VAT)

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Units
Per Unit
50 - 90PHP36.122
100 - 240PHP32.486
250 - 990PHP31.866
1000 +PHP29.546

*price indicative

Packaging Options:
RS Stock No.:
262-6776P
Mfr. Part No.:
IRFU3910PBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

16A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-251

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

115mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

29.3nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

52W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Length

6.73mm

Height

2.39mm

Standards/Approvals

RoHS

Width

6.22 mm

Automotive Standard

No

Distrelec Product Id

304-41-680

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. It has ultra low on-resistance. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

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