Infineon IPT Type N-Channel MOSFET, 365 A, 100 V, 16-Pin HDSOP

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Subtotal (1 reel of 1800 units)*

PHP348,559.20

(exc. VAT)

PHP390,385.80

(inc. VAT)

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Units
Per Unit
Per Reel*
1800 - 1800PHP193.644PHP348,559.20
3600 - 3600PHP183.962PHP331,131.60
5400 +PHP174.764PHP314,575.20

*price indicative

RS Stock No.:
259-2730
Mfr. Part No.:
IPTC014N10NM5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

365A

Maximum Drain Source Voltage Vds

100V

Series

IPT

Package Type

HDSOP

Pin Count

16

Maximum Drain Source Resistance Rds

1.4mΩ

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

168nC

Forward Voltage Vf

0.88V

Maximum Power Dissipation Pd

375W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, IEC 61249-2-21

Automotive Standard

No

The Infineon OptiMOS 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter. With a broad package portfolio, this family of power MOSFETs offers the industry’s lowest RDS(on). One of the biggest contributors to this industry leading figure of merit (FOM) is the low on-state resistance with a value as low as 2.7 mΩ in the SuperSO8 package, providing the highest level of power density and efficiency.

N-channel, normal level

Very low on-resistance RDS(on)

Superior thermal resistance

100% avalanche tested

Pb-free lead plating; RoHS compliant

Halogen-free according to IEC61249-2-24

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