Infineon HEXFET Type N-Channel MOSFET, 17 A, 100 V TO-263
- RS Stock No.:
- 258-3991
- Mfr. Part No.:
- IRL530NSTRLPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 800 units)*
PHP36,691.20
(exc. VAT)
PHP41,094.40
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from March 16, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 800 - 800 | PHP45.864 | PHP36,691.20 |
| 1600 - 1600 | PHP44.717 | PHP35,773.60 |
| 2400 + | PHP43.599 | PHP34,879.20 |
*price indicative
- RS Stock No.:
- 258-3991
- Mfr. Part No.:
- IRL530NSTRLPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 3.8W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 22.7nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 3.8W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 22.7nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon HEXFET power MOSFET is fifth generation HEXFETs from international rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry standard surface-mount power package
Related links
- Infineon HEXFET Type N-Channel MOSFET 100 V TO-263 IRL530NSTRLPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 IRF530NSTRLPBF
- Infineon HEXFET Type N-Channel MOSFET 60 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 40 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 250 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 75 V TO-263