Infineon IPD Type N-Channel MOSFET, 4.5 A, 650 V N TO-252 IPD60R2K0PFD7SAUMA1
- RS Stock No.:
- 258-3856
- Mfr. Part No.:
- IPD60R2K0PFD7SAUMA1
- Manufacturer:
- Infineon
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 258-3856
- Mfr. Part No.:
- IPD60R2K0PFD7SAUMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 210mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.2V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 210mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.2V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS PFD7 super junction MOSFET complements the CoolMOS 7 offering for consumer applications. The CoolMOS PFD7 super junction MOSFET in a TO 252 DPAK package features RDS(on) of 2,000mOhm leading to low switching losses. An implemented fast body diode secures a robust device and in turn reduced bill-of material for the customer. Additionally, our industry-leading SMD package offering contributes to PCB space savings and simplifies manufacturing. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low power motor drives.
Wide range of RDS(on) values
Excellent commutation ruggedness
Low EMI
Broad package portfolio
BOM cost reduction and easy manufacturing
Robustness and reliability
Easy to select the right parts for design fine-tuning
Related links
- Infineon IPD Type N-Channel MOSFET 650 V N TO-252
- Infineon IPD Type N-Channel MOSFET 650 V N TO-252
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- Infineon IPD Type N-Channel MOSFET 650 V N TO-252 IPD60R360PFD7SAUMA1
- Infineon IPD Type N-Channel MOSFET & Diode, 1.5 A N TO-252
- Infineon IPD Type N-Channel MOSFET 60 V N TO-252
- Infineon IPD Type N-Channel MOSFET 100 V N TO-252
