Infineon IPD Type N-Channel MOSFET, 4.3 A, 500 V N, 3-Pin TO-252 IPD50R950CEAUMA1
- RS Stock No.:
- 258-3847
- Mfr. Part No.:
- IPD50R950CEAUMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP210.60
(exc. VAT)
PHP235.85
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 2,290 unit(s) shipping from December 29, 2025
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP42.12 | PHP210.60 |
| 10 - 95 | PHP40.856 | PHP204.28 |
| 100 - 245 | PHP38.404 | PHP192.02 |
| 250 - 495 | PHP34.948 | PHP174.74 |
| 500 + | PHP30.754 | PHP153.77 |
*price indicative
- RS Stock No.:
- 258-3847
- Mfr. Part No.:
- IPD50R950CEAUMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.3A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 950mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 53W | |
| Forward Voltage Vf | 0.83V | |
| Typical Gate Charge Qg @ Vgs | 10.5nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.3A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 950mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 53W | ||
Forward Voltage Vf 0.83V | ||
Typical Gate Charge Qg @ Vgs 10.5nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching super junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
High body diode ruggedness
Reduced reverse recovery charge
Easy control of switching behaviour
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