Infineon iPB Type N-Channel MOSFET, 211 A, 650 V N TO-263 IPBE65R050CFD7AATMA1
- RS Stock No.:
- 258-3827
- Mfr. Part No.:
- IPBE65R050CFD7AATMA1
- Manufacturer:
- Infineon
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Subtotal (1 unit)*
PHP460.15
(exc. VAT)
PHP515.37
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 926 unit(s) ready to ship from another location
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Units | Per Unit |
|---|---|
| 1 - 9 | PHP460.15 |
| 10 - 99 | PHP422.84 |
| 100 - 249 | PHP357.16 |
| 250 - 499 | PHP319.53 |
| 500 + | PHP309.29 |
*price indicative
- RS Stock No.:
- 258-3827
- Mfr. Part No.:
- IPBE65R050CFD7AATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 211A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | iPB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 40.7mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.2V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 211A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series iPB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 40.7mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.2V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolMOS C3A technology was designed to meet the growing demands of higher system voltages in the area of electric vehicles, such as PHEVs and BEV.
Best-in-class quality and reliability
Higher breakdown voltage
High peak current capability
Related links
- Infineon iPB Type N-Channel MOSFET 650 V N TO-263
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- Infineon iPB Type N-Channel MOSFET 600 V N TO-263
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- Infineon iPB Type N-Channel MOSFET 80 V N TO-263