Infineon iPB Type N-Channel MOSFET, 260 A, 80 V P, 7-Pin TO-263 IPB015N08N5ATMA1
- RS Stock No.:
- 258-3784
- Mfr. Part No.:
- IPB015N08N5ATMA1
- Manufacturer:
- Infineon
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PHP320.76
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PHP359.25
(inc. VAT)
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Units | Per Unit |
|---|---|
| 1 - 9 | PHP320.76 |
| 10 - 99 | PHP290.23 |
| 100 - 249 | PHP240.24 |
| 250 - 499 | PHP209.27 |
| 500 + | PHP196.44 |
*price indicative
- RS Stock No.:
- 258-3784
- Mfr. Part No.:
- IPB015N08N5ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 260A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-263 | |
| Series | iPB | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 1.5mΩ | |
| Channel Mode | P | |
| Forward Voltage Vf | 0.86V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Typical Gate Charge Qg @ Vgs | 178nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 260A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-263 | ||
Series iPB | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 1.5mΩ | ||
Channel Mode P | ||
Forward Voltage Vf 0.86V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Typical Gate Charge Qg @ Vgs 178nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 80V industrial power MOSFET offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters.
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
Related links
- Infineon iPB Type N-Channel MOSFET 80 V P, 7-Pin TO-263
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- Infineon iPB Type N-Channel MOSFET 80 V P TO-263 IPB019N08NF2SATMA1
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- Infineon iPB Type N-Channel MOSFET 100 V P TO-263