Infineon OptiMOS Type N-Channel MOSFET, 257 A, 60 V, 8-Pin TDSON

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Subtotal (1 reel of 5000 units)*

PHP842,800.00

(exc. VAT)

PHP943,950.00

(inc. VAT)

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Units
Per Unit
Per Reel*
5000 - 5000PHP168.56PHP842,800.00
10000 - 10000PHP151.704PHP758,520.00
15000 +PHP136.534PHP682,670.00

*price indicative

RS Stock No.:
258-0680
Mfr. Part No.:
BSC014N06NSTATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

257A

Maximum Drain Source Voltage Vds

60V

Series

OptiMOS

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.45mΩ

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

188W

Typical Gate Charge Qg @ Vgs

89nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

IEC 61249-2-21, RoHS

Automotive Standard

No

The Infineon OptiMOS 5 power MOSFET in SuperSO8 package offers the latest technology together with temperature improvements in the package. This new combination enables higher power density as well as improved robustness. Compared to lower rated devices, the 175°C TJ_MAX feature offers either more power at a higher operating junction temperature or longer lifetime at the same operating junction temperature. Furthermore, 20% improvement in the safe operating area is achieved. This new package feature is the perfect fit for applications such as telecom, motor drives and server.

Low RDS(on)

Optimized for synchronous rectification

Longer life time

Highest efficiency and power density

Highest system reliability

Thermal robustness

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