N-Channel MOSFET, 306 A, 60 V TSON-8-3 Infineon BSC012N06NSATMA1

The Infineon OptiMOS MOSFETs in SuperSO8 package extend OptiMOS 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. Low reverse recovery charge improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.

Lower full load temperature
Less paralleling
Reduced overshoot
Increased system power density
Smaller size

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