DiodesZetex Type P-Channel MOSFET, 10.7 A, 12 V Enhancement PowerDI5060-8 DMPH33M8SPSW-13
- RS Stock No.:
- 254-8640
- Mfr. Part No.:
- DMPH33M8SPSW-13
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP776.56
(exc. VAT)
PHP869.745
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 2,495 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 45 | PHP155.312 | PHP776.56 |
| 50 - 95 | PHP147.002 | PHP735.01 |
| 100 - 245 | PHP135.92 | PHP679.60 |
| 250 - 995 | PHP133.15 | PHP665.75 |
| 1000 + | PHP90.556 | PHP452.78 |
*price indicative
- RS Stock No.:
- 254-8640
- Mfr. Part No.:
- DMPH33M8SPSW-13
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 10.7A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | PowerDI5060-8 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.73W | |
| Typical Gate Charge Qg @ Vgs | 127nC | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1mm | |
| Width | 5.15 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 10.7A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type PowerDI5060-8 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.73W | ||
Typical Gate Charge Qg @ Vgs 127nC | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Operating Temperature 175°C | ||
Height 1mm | ||
Width 5.15 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The DiodeZetex P channel enhancement mode MOSFET has been designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is applicable in general purpose inte
Low on resistance
High conversion energy
Halogen and antimony Free
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