DiodesZetex Type P-Channel MOSFET, 10.7 A, 12 V Enhancement, 8-Pin PowerDI3333-8
- RS Stock No.:
- 254-8615
- Mfr. Part No.:
- DMP2004UFG-13
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Subtotal (1 reel of 3000 units)*
PHP67,218.00
(exc. VAT)
PHP75,285.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
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- Shipping from July 10, 2026
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Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 + | PHP22.406 | PHP67,218.00 |
*price indicative
- RS Stock No.:
- 254-8615
- Mfr. Part No.:
- DMP2004UFG-13
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 10.7A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | PowerDI3333-8 | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.73W | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 0.85mm | |
| Standards/Approvals | No | |
| Length | 3.25mm | |
| Width | 3.35 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 10.7A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type PowerDI3333-8 | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.73W | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 0.85mm | ||
Standards/Approvals No | ||
Length 3.25mm | ||
Width 3.35 mm | ||
Automotive Standard AEC-Q101 | ||
The DiodeZetex P channel enhancement mode MOSFET has been designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is applicable in load switches and po
Low on resistance
Fast switching speed
Halogen and antimony Free
Related links
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