Vishay Type N-Channel MOSFET, 126 A, 30 V Depletion, 8-Pin PowerPAK SO-8DC SIDR5102EP-T1-RE3
- RS Stock No.:
- 252-0251
- Mfr. Part No.:
- SIDR5102EP-T1-RE3
- Manufacturer:
- Vishay
This image is representative of the product range
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View bulk pricing optionsSubtotal (1 pack of 2 units)*
PHP454.77
(exc. VAT)
PHP509.342
(inc. VAT)
FREE delivery for orders over ₱5,000.00
Last RS stock
- Final 5,890 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 48 | PHP227.385 | PHP454.77 |
| 50 - 98 | PHP204.645 | PHP409.29 |
| 100 - 248 | PHP184.185 | PHP368.37 |
| 250 - 998 | PHP165.77 | PHP331.54 |
| 1000 + | PHP149.19 | PHP298.38 |
*price indicative
- RS Stock No.:
- 252-0251
- Mfr. Part No.:
- SIDR5102EP-T1-RE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 126A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK SO-8DC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.01mΩ | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 150W | |
| Typical Gate Charge Qg @ Vgs | 46.1nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.15mm | |
| Width | 5.15mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 126A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK SO-8DC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.01mΩ | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 150W | ||
Typical Gate Charge Qg @ Vgs 46.1nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.15mm | ||
Width 5.15mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.
TrenchFET Gen V power MOSFET
Very low RDS - Qg figure-of-merit (FOM)
Tuned for the lowest RDS - Qoss FOM
100 % Rg and UIS tested
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