Infineon FS55MR12W1M1H_B11 Type N-Channel MOSFET, 15 A, 1200 V Enhancement, 8-Pin AG-EASY1B FS55MR12W1M1HB11NPSA1
- RS Stock No.:
- 250-0229
- Mfr. Part No.:
- FS55MR12W1M1HB11NPSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
PHP3,838.82
(exc. VAT)
PHP4,299.48
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 20 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 1 - 1 | PHP3,838.82 |
| 2 - 5 | PHP3,647.07 |
| 6 - 11 | PHP3,464.75 |
| 12 - 17 | PHP3,291.27 |
| 18 + | PHP3,126.65 |
*price indicative
- RS Stock No.:
- 250-0229
- Mfr. Part No.:
- FS55MR12W1M1HB11NPSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | AG-EASY1B | |
| Series | FS55MR12W1M1H_B11 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 114mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | -10 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 60747, 60749 and 60068 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type AG-EASY1B | ||
Series FS55MR12W1M1H_B11 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 114mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs -10 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 60747, 60749 and 60068 | ||
Automotive Standard AEC-Q101 | ||
The Infineon CoolSiC MOSFET EasyPACK™ 1B 1200 V / 55 mΩ sixpack module with CoolSiC™ MOSFET with enhanced generation 1, NTC and PressFIT Contact Technology.
Low inductive design
Low switching losses
Rugged mounting due to integrated mounting clamps
PressFIT contact technology
Integrated NTC temperature sensor
Related links
- Infineon FS55MR12W1M1H_B11 Type N-Channel MOSFET 1200 V Enhancement, 8-Pin AG-EASY1B
- Infineon EasyDUAL Type N-Channel MOSFET 1200 V Enhancement, 23-Pin AG-EASY1B FF17MR12W1M1HB11BPSA1
- Infineon EasyDUAL Dual SiC N-Channel MOSFET 1200 V, 23-Pin AG-EASY1B FF17MR12W1M1HPB11BPSA1
- Infineon EasyPACK Dual SiC N-Channel MOSFET 1200 V, 23-Pin AG-EASY1B DF14MR12W1M1HFB67BPSA1
- Infineon EasyPACK Dual SiC N-Channel MOSFET 1200 V, 23-Pin AG-EASY1B DF8MR12W1M1HFB67BPSA1
- Infineon EasyDUAL Dual SiC N-Channel MOSFET 1200 V, 23-Pin AG-EASY1B FF17MR12W1M1HB70BPSA1
- Infineon EasyDUAL Dual SiC N-Channel MOSFET 1200 V, 23-Pin AG-EASY1B FF33MR12W1M1HB11BPSA1
- Infineon EasyPACK 3 SiC N-Channel MOSFET 1200 V, 23-Pin AG-EASY1B DF11MR12W1M1HFB67BPSA1
