Infineon IMBF Type N-Channel MOSFET, 64 A, 100 V N, 7-Pin TO-263 IMBF170R450M1XTMA1
- RS Stock No.:
- 249-6950
- Mfr. Part No.:
- IMBF170R450M1XTMA1
- Manufacturer:
- Infineon
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PHP364.04
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PHP407.72
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Units | Per Unit |
|---|---|
| 1 - 9 | PHP364.04 |
| 10 - 99 | PHP327.82 |
| 100 - 249 | PHP295.06 |
| 250 - 499 | PHP265.29 |
| 500 + | PHP238.98 |
*price indicative
- RS Stock No.:
- 249-6950
- Mfr. Part No.:
- IMBF170R450M1XTMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | IMBF | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series IMBF | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon silicon carbide MOSFET reduction of system complexity. It directly drive from fly-back controller. Efficiency improvement and cooling effort reduction. Enabling higher frequency.
Revolutionary semiconductor material - Silicon Carbide
Optimized for fly-back topologies
12V/0V gate-source voltage compatible with most fly-back controllers
Very low switching losses
Benchmark gate threshold voltage, VGS(th) = 4.5V
Fully controllable dV/dt for EMI optimization
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