Infineon iPB Type N-Channel MOSFET, 35 A, 100 V Enhancement, 3-Pin TO-263 IPB35N10S3L26ATMA1
- RS Stock No.:
- 249-6902
- Mfr. Part No.:
- IPB35N10S3L26ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
PHP228.10
(exc. VAT)
PHP255.48
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 1,000 unit(s) shipping from January 15, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP114.05 | PHP228.10 |
| 10 - 98 | PHP102.70 | PHP205.40 |
| 100 - 248 | PHP92.455 | PHP184.91 |
| 250 - 498 | PHP83.045 | PHP166.09 |
| 500 + | PHP74.74 | PHP149.48 |
*price indicative
- RS Stock No.:
- 249-6902
- Mfr. Part No.:
- IPB35N10S3L26ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | iPB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series iPB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.
175°C operating temperature
Related links
- Infineon iPB Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon iPB Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-263
- Infineon iPB Type N-Channel MOSFET 950 V Enhancement, 3-Pin TO-263
- Infineon iPB Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-263
- Infineon iPB Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-263
- Infineon iPB Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Infineon iPB Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Infineon iPB Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263