Infineon IAUZ Type N-Channel MOSFET, 40 A, 60 V Enhancement, 8-Pin PQFN IAUZ40N06S5N050ATMA1
- RS Stock No.:
- 249-6900
- Mfr. Part No.:
- IAUZ40N06S5N050ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP167.31
(exc. VAT)
PHP187.385
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 4,995 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP33.462 | PHP167.31 |
| 10 - 95 | PHP32.458 | PHP162.29 |
| 100 - 245 | PHP31.16 | PHP155.80 |
| 250 - 495 | PHP29.602 | PHP148.01 |
| 500 + | PHP27.826 | PHP139.13 |
*price indicative
- RS Stock No.:
- 249-6900
- Mfr. Part No.:
- IAUZ40N06S5N050ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | IAUZ | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series IAUZ | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.
175°C operating temperature
Related links
- Infineon IAUZ Type N-Channel MOSFET 60 V Enhancement, 8-Pin PQFN
- Infineon IAUZ Type N-Channel MOSFET 60 V Enhancement, 8-Pin PQFN
- Infineon IAUZ Type N-Channel MOSFET 60 V Enhancement, 8-Pin PQFN IAUZ30N06S5L140ATMA1
- Infineon IAUZ Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon IAUZ Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUZ30N10S5L240ATMA1
- Infineon IAUZ Type N-Channel MOSFET 1200 V Enhancement, 8-Pin AG-EASY2B
- Infineon IAUZ Type N-Channel MOSFET 1200 V Enhancement, 8-Pin AG-EASY2B F3L8MR12W2M1HPB11BPSA1
- Infineon IAUZ Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUZ20N08S5L300ATMA1