Microchip MSC25SMA330B4 Type N-Channel MOSFET, 104 A, 3300 V Enhancement TO-247 MSC025SMA330B4
- RS Stock No.:
- 249-4128
- Mfr. Part No.:
- MSC025SMA330B4
- Manufacturer:
- Microchip
Subtotal (1 unit)*
PHP32,041.05
(exc. VAT)
PHP35,885.98
(inc. VAT)
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Units | Per Unit |
|---|---|
| 1 + | PHP32,041.05 |
*price indicative
- RS Stock No.:
- 249-4128
- Mfr. Part No.:
- MSC025SMA330B4
- Manufacturer:
- Microchip
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 104A | |
| Maximum Drain Source Voltage Vds | 3300V | |
| Package Type | TO-247 | |
| Series | MSC25SMA330B4 | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.8V | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 104A | ||
Maximum Drain Source Voltage Vds 3300V | ||
Package Type TO-247 | ||
Series MSC25SMA330B4 | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.8V | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip's MOSFET-SiC-3300V is part of the newest family of SiC MOSFET devices. The Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment. This device is fast and reliable body diode with superior avalanche ruggedness.
Low capacitances and low gate charge
Fast switching speed due to low internal gage resistance (ESR)
Stable operation at high junction temperature at 175 degrees Celsius