DiodesZetex Type N-Channel MOSFET, 11 A, 20 V Enhancement, 6-Pin UDFN-2020 DMN29M9UFDF-7
- RS Stock No.:
- 246-7515
- Mfr. Part No.:
- DMN29M9UFDF-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
PHP467.95
(exc. VAT)
PHP524.10
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 2,875 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | PHP18.718 | PHP467.95 |
| 50 - 75 | PHP16.846 | PHP421.15 |
| 100 - 225 | PHP15.162 | PHP379.05 |
| 250 - 975 | PHP13.645 | PHP341.13 |
| 1000 + | PHP12.281 | PHP307.03 |
*price indicative
- RS Stock No.:
- 246-7515
- Mfr. Part No.:
- DMN29M9UFDF-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | UDFN-2020 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 1.73W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 2.05mm | |
| Width | 2.05 mm | |
| Height | 0.63mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type UDFN-2020 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 1.73W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 2.05mm | ||
Width 2.05 mm | ||
Height 0.63mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in U-DFN2020-6 packaging and 0.6mm profile makes it ideal for low profile applications . It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application.
Maximum drain to source voltage is 20 V Maximum gate to source voltage is ±12 V It has PCB Footprint of 4mm^2 It offers low gate threshold voltage It provides an ESD protected Gate
Related links
- DiodesZetex Type N-Channel MOSFET 20 V Enhancement, 6-Pin UDFN-2020
- DiodesZetex Single 1 Type N-Channel MOSFET 12 V Enhancement, 6-Pin UDFN-2020 DMN1019UFDE-7
- DiodesZetex Type N-Channel MOSFET 30 V Enhancement, 6-Pin UDFN-2020
- DiodesZetex Type N 4.6 A 6-Pin UDFN-2020
- DiodesZetex Type N-Channel MOSFET 30 V Enhancement, 6-Pin UDFN-2020 DMN3016LFDFQ-7
- DiodesZetex Type N 4.6 A 6-Pin UDFN-2020 DMC2053UFDBQ-7
- DiodesZetex 2 Type P 4.6 A 6-Pin UDFN-2020
- DiodesZetex 2 Type P 4.6 A 6-Pin UDFN-2020 DMC2053UFDB-7